continental device india limited data sheet page 1 of 4 silicon planar epitaxial transistors p?n?p silicon transistors marking CMBT2907 = 2b CMBT2907a = 2f absolute maximum ratings CMBT2907 CMBT2907a collector?base voltage (open emitter) ?v cb0 max. 60 60 v collector?emitter voltage (open base) ?v ce0 max. 40 60 v emitter?base voltage (open collector) ?v eb0 max. 5,0 v collector current (d.c.) ? i c max. 600 ma total power dissipation up to t amb = 25 cp tot max. 250 mw junction temperature t j max. 150 c d.c. current gain ?i c = 500ma; ?v ce = 10v h fe >30 50 turn?off switching time ?i con = 150 ma; ?i bon = i boff = 15 ma t off < 100 ns transition frequency at f = 100 mhz ?i c = 50 ma; ?v ce = 20 v f t > 200 mhz CMBT2907 CMBT2907a package outline details all dimensions in mm pin configuration 1 = base 2 = emitter 3 = collector 3 2 1 sot-23 formed smd package continental device india limited an iso/ts16949 and iso 9001 certified company
continental device india limited data sheet page 2 of 4 ratings (at t a = 25c unless otherwise specified) limiting values CMBT2907 CMBT2907a collector?base voltage (open emitter) ?v cb0 max. 60 60 v collector?emitter voltage (open base) ?v ce0 max. 40 60 v emitter?base voltage (open collector) ?v eb0 max. 5,0 v collector current (d.c.) ? i c max. 600 ma power dissipation up to t amb = 25 c p tot max. 250 mw storage temperature range t stg ?55 to +150 c junction temperature t j max. 150 c thermal resistance from junction to ambient in free air r th j?a = 500 k/w characteristics t j = 25 c unless otherwise specified collector cut?off current CMBT2907 CMBT2907a i e = 0; ?v cb = 50v ?i cb0 <20 10 na i e = 0; ?v cb = 50v; t j = 125 c ?i cb0 <20 10 m a ?v eb = 0,5 v; ?v ce = 30 v ?i cex <50 na base current with reverse biased emitter junction ?v eb = 3v; ?v ce = 30v ?i bex <50 na saturation voltages ?i c = 150 ma; ?l b = 15 ma ?v cesat < 0,4 v ?v besat < 1,3 v ?i c = 500 ma; ?l b = 50 ma ?v cesat < 1,6 v ?v besat < 2,6 v collector?base breakdown voltage open emitter; ?i c = 10 m a; i e = 0 ?v (br)cbo > 60 v collector?emitter breakdown voltage open base; ?i c = 10 ma; l b: 0?v (br)ceo >40 60 v emitter?base breakdown voltage open collector; ?i e = 10 m a; i c = 0 ?v (br)ebo > 5,0 v CMBT2907 CMBT2907a d.c. current gain ?i c = 0,1 ma; ?v ce = 10 v h fe >35 75 ?i c = 1 ma; ?v ce = 10 v h fe > 50 100 ?i c = 10 ma; ?v ce = 10 v h fe > 75 100 ?i c = 150ma; ?v ce = 10v h fe 100 to 300 ?i c = 500ma; ?v ce = 10v h fe >30 50 CMBT2907 CMBT2907a
continental device india limited data sheet page 3 of 4 transition frequency at f = 100 mhz ?i c = 50 ma; ? v ce = 20 v; t amb = 25 c f t > 200 mhz output capacitance at f = 1 mhz i e = i e = 0; ?v cb = 10v c o < 8,0 pf input capacitance at f = 1 mhz i c = i c = 0; ?v eb = 2 v c i <30pf switching times (between 10% and 90% levels) turn?on time when switched to ?l c = 150ma; ?l b = 15 ma; v cc = 30v delay time t d <10ns rise time t r <40ns turn on time (t d + tr) ton < 45 ns turn?off time when switched from ?i c = 150 ma; ?l b = 15 ma; v cc = 6 v to cut?off with + i bm = 15 ma storage time t s <80ns fall time t f <30ns turn?off time (t s + t f )t off < 100 ns CMBT2907 CMBT2907a
continental device india limited data sheet page 4 of 4 customer notes disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suite d for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so a s to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web sit e/ cd are believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in lif e saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-2579 6150, 5141 1112 fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com
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